unisonic technologies co., ltd uh11k preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r218-027.b dual bias resistor transistors ? description the utc uh11k is a dual bias resistor tr ansistors, it uses utc?s advanced technology to provide customers with saving board space, reducing component count, etc. the utc uh11k is suitable for low power surface mount applications, etc. ? features * reducing component count * saving board space ? equivalent circuit ? ordering information ordering number package pin assignment packing 12345 6 uh11kg-al6-r sot-363 e1 b1 c2 e2 b2 c1 tape reel note: pin assignment: g: gate d: drain s: source (1) r: tape reel (2) al6: sot-363 (3) g: halogen free and lead free uh11kg-al6-r (1)packing type (2)package type (3)green package ? marking
uh11k preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r218-027.b ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v collector current i c 100 ma power dissipation p d 150 mw junction temperature t j -55~+150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =10a, i e =0 50 v collector-emitter breakdown voltage (note 1) bv ceo i c =2.0ma, i b =0 50 v collector-base cutoff current i cbo v cb =50v, i e =0 100 na collector-emitter cutoff current i ceo v ce =50v, i b =0 500 na emitter-base cutoff current i ebo v eb =6.0v, i c =0 0.5 ma on characteristics (note 2) dc current gain h fe v ce =10v, i c =5.0ma 35 60 output voltage (on) v ol v cc =5.0v, v b =2.5v, r l =1.0 k ? 0.2 v on characteristics (note 2) input resistor r 1 7.0 10 13 k ? resistor ratio r 1 /r 2 0.8 1.0 1.2 k ? notes: 1. pulse test: pulse width<300s, duty cycle<2.0% 2. pulse test: pulse width<300ms, duty cycle<2.0%
uh11k preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-027.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
